Datasheet STL200N45LF7 (STMicroelectronics)

STL200N45LF7
N-channel 45 V, 1.4 mΩ typ., 120 A STripFET ™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data
Features Order code VDS RDS(on) max. ID
STL200N45LF7 45 V 1.8 mΩ 120 A Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness
Applications
Switching applications
Figure 1: Internal schematic diagram Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Table 1: Device summary Order code Marking Package Packing
STL200N45LF7 200N45F7 PowerFLAT™ 5x6 Tape and reel June 2016 DocID027980 Rev 4 1/14 This is information on a product in full production. www.st.com