Datasheet TIP125, TIP126,TIP127 (ON Semiconductor) - 3

Values are at TC = 25°C unless otherwise noted. Symbol
PC Parameter Value Collector Dissipation (TA = 25°C) 2 Collector Dissipation (TC = 25°C) 65 Unit
W Electrical Characteristics
Values are at TC = 25°C unless otherwise noted. Symbol Parameter Conditions
TIP125 VCEO(sus) ICEO Collector-Emitter Sustaining
TIP126
Voltage
TIP127
Collector Cut-Off Current ICBO Collector Cut-Off Current IEBO Emitter Cut-Off Current hFE DC Current Gain(1) Max. Unit -60
IC = -100 mA, IB = 0 -80 V -100 TIP125 VCE = -30 V, IB = 0 -2 TIP126 VCE = -40 V, IB = 0 -2 TIP127 VCE = -50 V, IB = 0 -2 TIP125 VCB = -60 V, IE = 0 -1 TIP126 VCB = -80 V, IE = 0 -1 TIP127 VCB = -100 V, IE = 0 -1 VEB = -5 V, IC = 0 -2 VCE = -3 V, IC = -0.5 A 1000 VCE = -3 V, IC = -3 A 1000 mA mA
mA IC = -3 A, IB = -12 mA -2 IC = -5 A, IB = -20 mA -4 Base-Emitter On Voltage(1) VCE = -3 V, IC = -3 A -2.5 V Output Capacitance VCB = -10 V, IE = 0,
f = 0.1 MHz 300 pF VCE(sat) Collector-Emitter Saturation Voltage(1) VBE(on)
Cob Min. V Note:
1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%. © 2001 Fairchild Semiconductor Corporation
TIP125 / TIP126 / TIP127 Rev. 1.1.0 www.fairchildsemi.com
2 TIP125 / TIP126 / TIP127 — PNP Epitaxial Darlington Transistor Thermal Characteristics