Datasheet 2N3053 (TT Electronics)

MEDIUM POWER SILICON
NPN TRANSISTOR
2N3053
• Low Leakage Current,
High Transition Frequency (FT) = 100MHz Typ. • Hermetic TO-39 Metal Package. • Ideally Suited For Medium Current Switching And
Amplifier Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
VCEO
VCER
VCEX
VEBO
IC
PD
PD
TJ
Tstg Collector – Base Voltage
Collector – Emitter Voltage
RBE = 10Ω
Collector – Emitter Voltage
VBE = -1.5V
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
TA = 25°C
Total Power Dissipation at
Derate Above 25°C
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range 60V
40V
50V
60V
5V
0.7A
1.0W
5.71mW/°C
5W
28.6mW/°C
-65 to +200°C
-65 to +200°C THERMAL PROPERTIES
Symbols Parameters Max. Units RθJA Thermal Resistance, Junction To Ambient 175 °C/W RθJC Thermal Resistance, Junction To Case 35 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected] Website: http://www.semelab-tt.com Document Number 3065
Issue 2
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