Datasheet 2N3053 (TT Electronics) - 2

MEDIUM POWER SILICON
NPN TRANSISTOR
2N3053
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions V(BR)CEO IC = 100µA IB = 0 40 IC = 10mA RBE = 10Ω 50 IC = 100µA IE = 0 60 V(BR)EBO Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base
Breakdown Voltage IE = 100µA IC = 0 5 ICBO Collector Cut-Off Current VCB = 30V IE = 0 0.25 IEBO Emitter Cut-Off Current VEB = 4V IC = 0 0.25 Forward-current transfer
ratio
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage IC = 150mA VCE = 10V IC = 150mA IB = 15mA 1.4 IC = 150mA IB = 15mA 1.7 IC = 50mA VCE = 10V V(BR)CER (1) V(BR)CBO hFE (1) (1) VCE(sat)
VBE(sat) (1) Min. Typ Max. Units V 50 µA 250 V DYNAMIC CHARACTERISTICS
fT Transition Frequency Cobo Output Capacitance Cibo Input Capacitance 100 MHz f = 20MHz
VCB = 10V IE = 0 15 pF 80 pF f = 1.0MHz
VEB = 0.5V IC = 0 f = 1.0MHz Notes
(1) Pulse Width ≤ 380us, δ ≤ 2% Semelab Limited
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Email: [email protected] Website: http://www.semelab-tt.com Document Number 3065
Issue 2
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