Datasheet NTD4815NH (ON Semiconductor) - 7
| Производитель | ON Semiconductor |
| Описание | Power MOSFET30 V, 35 A, Single N--Channel, DPAK/IPAK |
| Страниц / Страница | 9 / 7 — NTD4815NH. TYPICAL PERFORMANCE CURVES. Figure 13. Avalanche … |
| Версия | 3 |
| Формат / Размер файла | PDF / 353 Кб |
| Язык документа | английский |
NTD4815NH. TYPICAL PERFORMANCE CURVES. Figure 13. Avalanche Characteristics. Figure 14. Thermal Response. ORDERING INFORMATION
11 предложений от 11 поставщиков MOSFET N-CH 30V 6.9A IPAK. N-Channel 30V 6.9A (Ta), 35A (Tc) 1.26W (Ta), 32.6W (Tc) Through Hole I-PAK. Transistors - FETs,... |
| NTD4815NH-35G
ON Semiconductor | 13 ₽ | |
| NTD4815NH-35G
ON Semiconductor | 72 ₽ | |
| NTD4815NH-35G
ON Semiconductor | по запросу | |
| NTD4815NH-35G
Rochester Electronics | по запросу | |
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NTD4815NH TYPICAL PERFORMANCE CURVES
100 (AMPS) 100°C 25°C 10 125°C CURRENT 1 ,DRAIN I D 0.11 10 100 1000 PULSE WIDTH (ms)
Figure 13. Avalanche Characteristics
ANCE 1.0 D = 0.5 ESIST R 0.2 0.1 THERMAL 0.1 0.05 P(pk) MALIZED) R R 0.02 θJC(t) = r(t) RθJC D CURVES APPLY FOR POWER (NO 0.01 PULSE TRAIN SHOWN RANSIENT t1 READ TIME AT t T SINGLE PULSE 1 t2 TJ(pk) - TC = P(pk) RθJC(t) DUTY CYCLE, D = t1/t2 0.011.0E-05 1.0E- 04 1.0E- 03 1.0E- 02 1.0E- 01 1.0E+00 1.0E+01 ,EFFECTIVE t, TIME (ms) r(t)
Figure 14. Thermal Response ORDERING INFORMATION Device Package Shipping
† NTD4815NHT4G DPAK 2500 / Tape & Reel (Pb- Free) NTD4815NH- 1G IPAK 75 Units / Rail (Pb- Free) NTD4815NH- 35G IPAK Trimmed Lead 75 Units / Rail (3.5 0.15 mm) (Pb- Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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