Philips SemiconductorsProduct SpecificationPowerMOS transistorBUK455-60A/BGENERAL DESCRIPTIONQUICK REFERENCE DATA N-channel enhancement mode SYMBOLPARAMETERMAX.MAX.UNIT field-effect power transistor in a plastic envelope. BUK455-60A-60B The device is intended for use in V Drain-source voltage 60 60 V DS Switched Mode Power Supplies I Drain current (DC) 41 38 A D (SMPS), motor control, welding, P Total power dissipation 125 125 W tot DC/DC and AC/DC converters, and T Junction temperature 175 175 ˚C j in automotive and general purpose R Drain-source on-state 0.038 0.045 Ω DS(ON) switching applications. resistance PINNING - TO220ABPIN CONFIGURATIONSYMBOLPINDESCRIPTION d tab 1 gate 2 drain g 3 source tab drain 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT V Drain-source voltage - - 60 V DS V Drain-gate voltage R = 20 kΩ - 60 V DGR GS ±V Gate-source voltage - - 30 V GS -60A-60B I Drain current (DC) T = 25 ˚C - 41 38 A D mb I Drain current (DC) T = 100 ˚C - 29 27 A D mb I Drain current (pulse peak value) T = 25 ˚C - 164 152 A DM mb P Total power dissipation T = 25 ˚C - 125 W tot mb T Storage temperature - - 55 175 ˚C stg T Junction Temperature - - 175 ˚C j THERMAL RESISTANCESSYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT R Thermal resistance junction to - - 1.2 K/W th j-mb mounting base R Thermal resistance junction to - 60 - K/W th j-a ambient April 1993 1 Rev 1.100 Document Outline GENERAL DESCRIPTION QUICK REFERENCE DATA PINNING - TO220AB PIN CONFIGURATION SYMBOL LIMITING VALUES THERMAL RESISTANCES STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS AVALANCHE LIMITING VALUE MECHANICAL DATA DEFINITIONS LIFE SUPPORT APPLICATIONS
