Datasheet IRF9130 (Intersil)

IRF9130 Data Sheet February 1999 File Number 2220.3 -12A, -100V, 0.30 Ohm, P-Channel Power Features MOSFET
• -12A, -100V These are P-Channel enhancement mode silicon gate • rDS(ON) = 0.30Ω power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a • Single Pulse Avalanche Energy Rated specified level of energy in the breakdown avalanche mode • SOA is Power Dissipation Limited of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching • Nanosecond Switching Speeds convertors, motor drivers, relay drivers, and drivers for high • Linear Transfer Characteristics power bipolar switching transistors requiring high speed and • High Input Impedance low gate drive power. They can be operated directly from integrated circuits.
Symbol
Formerly developmental type TA17511.
D Ordering Information PART NUMBER PACKAGE BRAND G
IRF9130 TO-204AA IRF9130
S
NOTE: When ordering, use the entire part number.
Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1)
5-8 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999