Datasheet IRF9130 (Intersil) - 5
| Производитель | Intersil |
| Описание | -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET |
| Страниц / Страница | 7 / 5 — IRF9130. Typical Performance Curves. (Continued). 1.25. 1000. VGS = 0V, f … |
| Формат / Размер файла | PDF / 67 Кб |
| Язык документа | английский |
IRF9130. Typical Performance Curves. (Continued). 1.25. 1000. VGS = 0V, f = 1MHz CISS = CGS + CGD. 1.15. 800. CRSS = CGD. COSS. CDS + CGD
21 предложений от 21 поставщиков Non-Compliant Through Hole 12 g 11 mm No SVHC -4 V Through Hole |
| IRF9130
| 198 ₽ | |
| IRF9130
Infineon | 1 115 ₽ | |
| IRF9130
Infineon | по запросу | |
| IRF9130
International Rectifier | по запросу | |
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IRF9130 Typical Performance Curves
Unless Otherwise Specified
(Continued) 1.25 1000 VGS = 0V, f = 1MHz CISS = CGS + CGD 1.15 800 CRSS = CGD GE COSS
≈
CDS + CGD SOURCE A O T L O 1.05 600 CISS ANCE (pF) WN V CIT 0.95 A 400 COSS BREAKDO C, CAP 0.85 200 NORMALIZED DRAIN T CRSS 0.75 0 -40 0 40 80 120 160 0 -10 -20 -30 -40 -50 TJ, JUNCTION TEMPERATURE (oC) VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE VOLTAGE vs JUNCTION TEMPERATURE 5 -100 TJ = -55oC TJ = 25oC 4 TJ = 150oC ANCE (S) TJ = 125oC -10 3 PULSE DURATION = 80
µ
s DRAIN CURRENT (A) 2 O TJ = 25oC -1.0 , TRANSCONDUCT fs 1 g , SOURCE T I SD -0.1 0 -4 -8 -12 -16 -20 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 I D, DRAIN CURRENT (A) VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 0 ID = 15A GE (V) A T L O -5 VDS = -80V SOURCE V V O DS = -50V -10 VDS = -20V TE T , GA GSV -15 0 8 16 24 32 40 Qg(TOT), TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
5-12
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