Datasheet MTP36N06V (ON Semiconductor) - 7

MTP36N06V SAFE OPERATING AREA
1000 225 VGS = 20 V RDS(on) LIMIT SINGLE PULSE I THERMAL LIMIT D = 32 A 200 TC = 25°C PACKAGE LIMIT 175 (AMPS) O−SOURCE (mJ) 100 150 10 μs 125 100 10 100 μs 75 , DRAIN CURRENT I D 1 ms AVALANCHE ENERGY 50 10 ms , SINGLE PULSE DRAIN−T 25 E AS 1 dc 0 0.1 1 10 100 25 50 75 100 125 150 175 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus Safe Operating Area Starting Junction Temperature
1.00 D = 0.5 ANCE 0.2 RESIST 0.1 0.05 P 0.10 (pk) RθJC(t) = r(t) RθJC THERMAL D CURVES APPLY FOR POWER 0.02 PULSE TRAIN SHOWN , NORMALIZED EFFECTIVE 0.01 t1 READ TIME AT t1 r(t) t2 TJ(pk) − TC = P(pk) RθJC(t) SINGLE PULSE TRANSIENT DUTY CYCLE, D = t1/t2 0.01 1.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 1.0E+01 t, TIME (s)
Figure 13. Thermal Response
di/dt IS trr ta tb TIME tp 0.25 IS IS
Figure 14. Diode Reverse Recovery Waveform http://onsemi.com 6