Datasheet MUR405, MUR410, MUR415, MUR420, MUR440, MUR460 (ON Semiconductor) - 2

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MUR405, MUR410, MUR415, MUR420, MUR440, MUR460 MAXIMUM RATINGS MUR Rating Symbol 405 410 415 420 440 460 Unit
Peak Repetitive Reverse Voltage VRRM 50 100 150 200 400 600 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current (Square Wave) IF(AV) 4.0 @ TA = 80°C 4.0 @ A (Mounting Method #3 Per Note 2) TA = 40°C Nonrepetitive Peak Surge Current IFSM 125 110 A (Surge applied at rated load conditions, half wave, single phase, 60 Hz) Operating Junction Temperature & Storage Temperature TJ, Tstg *65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS MUR Rating Symbol 405 410 415 420 440 460 Unit
Maximum Thermal Resistance, Junction−to−Ambient RqJA See Note 2 °C/W Maximum Thermal Resistance, Junction−to−Case Body YqJC 6.6 °C/W
ELECTRICAL CHARACTERISTICS MUR Rating Symbol 405 410 415 420 440 460 Unit
Maximum Instantaneous Forward Voltage (Note 1) vF V (iF = 3.0 A, TJ = 150°C) 0.71 1.05 (iF = 3.0 A, TJ = 25°C) 0.88 1.25 (iF = 4.0 A, TJ = 25°C) 0.89 1.28 Maximum Instantaneous Reverse Current (Note 1) iR mA (Rated dc Voltage, TJ = 150°C) 150 250 (Rated dc Voltage, TJ = 25°C) 5 10 Maximum Reverse Recovery Time trr ns (IF = 1.0 A, di/dt = 50 A/ms) 35 75 (IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A) 25 50 Maximum Forward Recovery Time tfr 25 50 ns (IF = 1.0 A, di/dt = 100 A/ms, Recovery to 1.0 V) Controlled Avalanche Energy (Maximum) Waval 5 mJ Typical Peak Reverse Recovery Current IRM 0.8 1.7 A (IF = 1.0 A, di/dt = 50 A/ms) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
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