KSD2012KSD2012Low Frequency Power Amplifier • Complement to KSB1366 1 TO-220F 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25°C
unless otherwise noted SymbolParameterValueUnits VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current 3 A IB Base Current 0.3 A PC Collector Power Dissipation (TC=25°C) 25 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C