Двухполюсный плоскостной транзистор, RF Small Signal Bipolar Transistor, 0.05A I(C), 1Element, Very High Frequency Band, Silicon, PNP, TO-92, TO-92, 3Pin
(continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 20 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 20 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 3.0 V ICBO Collector Cutoff Current VCB = 10 V, IE = 0 100 nA IEBO Emitter Cutoff Current VEB = 2.0 V, IC = 0 100 nA MPSH81 / MMBTH81 PNP RF Transistor ON CHARACTERISTICS hFE DC Current Gain IC = 5.0 mA, VCE = 10 V VCE(sat) Collector-Emitter Saturation Voltage IC = 5.0 mA, IB = 0.5 mA 60 0.5 V VBE(on) Base-Emitter On Voltage IC = 5.0 mA, VCE = 10 V 0.9 V SMALL SIGNAL CHARACTERISTICS fT Current Gain -Bandwidth Product Ccb Collector-Base Capacitance IC = 5.0 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz Cce Collector Emitter Capcitance VCB = 10 V, IB = 0, f = 1.0 MHz 600 MHz 0.85 pF 0.65 pF *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. 3 Spice Model PNP(Is=10f Xti=3 Eg=1.11 Vaf=100 Bf=133.8 Ise=1.678p Ne=2.159 Ikf=.1658 Nk=.901 Xtb=1.5 Var=100 Br=1 Isc=9.519n Nc=3.88 Ikr=5.813 Rc=7.838 Cjc=2.81p Mjc=.1615 Vjc=.8282 Fc=.5 Cje=2.695p Mje=.3214 Vje=.7026 Tr=11.32n Tf=97.83p Itf=69.29 Xtf=599u Vtf=10) DC Current Gain vs Collector Current h FE -DC CURRENT GAIN 200 V CE = 1.0V 180 T A = 125°C 160 140 T A = 25°C 120 100 80 40 -1 I C = 10 I B -0.5 -0.2 T A = 25°C T A = 125°C -0.1 T A = -55°C -0.02 20 0 -0.1 Collector Saturation Voltage vs Collector Current -0.05 T A = -55°C 60 V CE(SAT) -COLLECTO R SAT. VOLTAG E (V) Typical Characteristics -1 -10 I C -COLLECTOR CURRENT (mA) -100 -0.01 -0.1 -1 -10 I C -COLLECTO R CURRENT ( mA) -100
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