Datasheet MPSH81, MMBTH81 (ON Semiconductor) - 4

(continued) Base-Emitter Saturation
Voltage vs Collector Current
-1.6 I C = 10 I B -1.4
-1.2
T A = -55°C -1
-0.8 T A = 25°C -0.6
T A = 125°C -0.4
-0.1 -1
-10
I C -COLLECTOR CURRENT (mA) -100 V BE(O N)-BASE-EMITTER ON VOLTAGE (V) (continued) Base-Emitter ON Voltage
vs Collector Current
1 V CE = 10V
T A = 25°C
A 0.8
0.6 T A = 100°C 0.4
0.2
0
-0.1 -100 3 100 f = 1.0 MHz 2.8
10
V CE = -6.0V 1
V CE = -3.0V 0.1 2.6
2.4
2.2
2
1.8 C obo 1.6
1.4 C ibo 1.2
0.01
25 50
75
100
125
T A -AMBIENT TEMPE RATURE (°C) 1 150 0 P D -POWER DISSIPATION (mW) -14
-12
-10
-8 1500 MHz
1200 MHz -6
-4
-2 500 MHz
200 MHz
200 MHz 0
-0.1 500 MHz 900 MHz -1
-10
I C -COLLECTOR CURRENT (mA) -2
-4
-6
-8
REVERSE BIAS VOLTAGE (V) -10 Power Dissipation vs
Ambient Temperature Contours of Constant Gain
Bandwidth Product (fT )
V CE -COLLECTOR VOLTAGE (V) -10
-1
C
I -COLLECTOR CURRENT (mA) Input / Output Capacitance
vs Reverse Bias Voltage Collector Reverse Current
vs Ambient Temperature CAPACITANCE (pF) I CES -COLLECTOR RE VERSE CURRENT ( nA) V BE( SAT) -BASE-EMITTER SAT. VOLTAGE (V) Typical Characteristics -100 350
300 TO-92
250
200 SOT-23 150
100
50
0
0 25 50 75 100 TEMPERATURE ( ° C) 125 150 MPSH81 / MMBTH81 PNP RF Transistor