Datasheet MPSA42, MMBTA42, PZTA42 (Fairchild) - 2

MPSA42 / MMBT NPN High Voltage Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
A42 / PZT
V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 300 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 300 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 µA, IC = 0 6.0 V ICBO Collector-Cutoff Current VCB = 200 V, IE = 0 0.1 µA IEBO Emitter-Cutoff Current VEB = 6.0 V, IC = 0 0.1 µA
A42
ON CHARACTERISTICS* hFE DC Current Gain IC = 1.0 mA, VCE = 10 V 25 IC = 10 mA, VCE = 10 V 40 IC = 30 mA, VCE = 10 V 40 V Collector-Emitter Saturation Voltage I CE(sat) C = 20 mA, IB = 2.0 mA 0.5 V V Base-Emitter Saturation Voltage I BE(sat) C = 20 mA, IB = 2.0 mA 0.9 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V, 50 MHz f = 100 MHz Ccb Collector-Base Capacitance VCB = 20 V, IE = 0, f = 1.0 MHz 3.0 pF
*
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
3 Spice Model
NPN (Is=34.9f Xti=3 Eg=1.11 Vaf=100 Bf=2.65K Ne=1.708 Ise=16.32p Ikf=23.79m Xtb=1.5 Br=9.769 Nc=2 Isc=0 Ikr=0 Rc=7 Cjc=14.23p Mjc=.5489 Vjc=.75 Fc=.5 Cje=49.62p Mje=.4136 Vje=.75 Tr=934.3p Tf=1.69n Itf=5 Vtf=20 Xtf=150 Rb=10)
Typical Characteristics DC Current Gain Collector- Emitter Saturation ) vs Collector Current (V Voltage vs Collect or Current E G
0.3 140
A T
β
= 10 L IN O A
120 0.25
125 °C V G R T
100
E N T
0.2
E IT
80
25 °C M RR 125 °C -E
0.15
CU R
60
C O 25 °C T - 40 °C C
0.1 40
- D E FE V = 5V L h CE L
20 0.05
- 40 °C O - C T
0.1 1 10 100 0.1 1 10 100
ESAC I C - C OLLEC TOR CUR REN T (mA) V I - COLLECTOR CURRENT (mA) C