Datasheet MURA115, MURA120, NRVUA120V, SURA8120 (ON Semiconductor) - 2

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MURA115, MURA120, NRVUA120V, SURA8120 MAXIMUM RATINGS Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR MURA115T3G 150 MURA120T3G/SURA8120T3G/NRVUA120VT3G 200 Average Rectified Forward Current IF(AV) A @ TL = 155°C 1.0 @ TL = 135°C 2.0 Non-Repetitive Peak Surge Current IFSM A (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 40 Operating Junction Temperature Range TJ −65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Lead (TL = 25°C) (Note 1) PsiJL 24 °C/W (Note 2) Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 216 1. Rating applies when surface mounted on the minimum pad size recommended, PC Board FR−4. 2. In compliance with JEDEC 51, these values (historically represented by RqJL) are now referenced as PsiJL.
ELECTRICAL CHARACTERISTICS Characteristic Symbol Max Unit
Maximum Instantaneous Forward Voltage (Note 3) vF V (iF = 1.0 A, TJ = 25°C) 0.875 (iF = 1.0 A, TJ = 150°C) 0.71 Maximum Instantaneous Reverse Current (Note 3) iR mA (Rated DC Voltage, TJ = 25°C) 2.0 (Rated DC Voltage, TJ = 150°C) 50 Maximum Reverse Recovery Time trr ns (iF = 1.0 A, di/dt = 50 A/ms) 35 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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