Datasheet 1N4740A - 1M200Z (Taiwan Semiconductor)

1N4740A – 1M200Z
Taiwan Semiconductor
1W, 10V - 200V Zener Diode FEATURES KEY PARAMETERS
● AEC-Q101 qualified available
PARAMETER VALUE UNIT
● Glass passivated chip junction ● Low profile package VZ 10 - 200 V ● Built-in strain relief Test current IZT 1.2 - 25 mA ● Low inductance Ptot 1 W ● Typical IR less than 5μA above 11V ● T RoHS Compliant J MAX 150 °C ● Halogen-free according to IEC 61249-2-21 Package DO-204AL (DO-41) Configuration Single die
APPLICATIONS
● For general purpose regulation and protection applications
MECHANICAL DATA
● Case: DO-204AL (DO-41) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Pure tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.300g (approximately)
DO-204AL (DO-41) ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Power dissipation at TA = 50°C 1 W Ptot Derate above 50°C(1) 6.67 mW/°C Operating junction temperature range TJ -55 to +150 °C Storage temperature range TSTG -55 to +150 °C
Note:
1. Mounted on Cu-Pad size 5mm x 5mm 1 Version: O2104