Datasheet IRF540 (Vishay)

IRF540
www.vishay.com Vishay Siliconix
Power MOSFET FEATURES
D • Dynamic dV/dt rating
TO-220AB
• Repetitive avalanche rated Available • 175 °C operating temperature Available • Fast switching G • Ease of paralleling Available • Simple drive requirements S D • Material categorization: for definitions of compliance G S please see www.vishay.com/doc?99912 N-Channel MOSFET
Note
* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
PRODUCT SUMMARY
Please see the information / tables in this datasheet for details VDS (V) 100 RDS(on) (Ω) VGS = 10 V 0.077
DESCRIPTION
Qg max. (nC) 72 Third generation power MOSFETs from Vishay provide the Q designer with the best combination of fast switching, gs (nC) 11 ruggedized device design, low on-resistance and Qgd (nC) 32 cost-effectiveness. Configuration Single The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB Lead (Pb)-free IRF540PbF Lead (Pb)-free and halogen-free IRF540PbF-BE3
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 100 V Gate-source voltage VGS ± 20 TC = 25 °C 28 Continuous drain current VGS at 10 V ID TC = 100 °C 20 A Pulsed drain current a IDM 110 Linear derating factor 1.0 W/°C Single pulse avalanche energy b EAS 230 mJ Repetitive avalanche current a IAR 28 A Repetitive avalanche energy a EAR 15 mJ Maximum power dissipation TC = 25 °C PD 150 W Peak diode recovery dV/dt c dV/dt 5.5 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +175 °C Soldering recommendations (peak temperature) d For 10 s 300 10 lbf · in Mounting torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 440 μH, Rg = 25 Ω, IAS = 28 A (see fig. 12) c. ISD ≤ 28 A, dI/dt ≤ 170 A/μs, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case S21-0819-Rev. C, 02-Aug-2021
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Document Number: 91021 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000