Datasheet MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G (ON Semiconductor) - 2

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MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage V(BR)R V (IR = 10 mA) 30 − − Total Capacitance CT pF (VR = 15 V, f = 1.0 MHz) Figure 1 − 0.9 1.5 Reverse Leakage IR nAdc (VR = 25 V) Figure 3 − 13 200 Forward Voltage VF Vdc (IF = 1.0 mAdc) Figure 4 − 0.38 0.45 Forward Voltage VF Vdc (IF = 10 mAdc) Figure 4 − 0.52 0.6 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION Device Package Shipping
† MBD301G TO−92 5,000 Units / Bulk (Pb−Free) MMBD301LT1G SOT−23 3,000 / Tape & Reel (Pb−Free) MMBD301LT3G SOT−23 10,000 / Tape & Reel (Pb−Free) SMMBD301LT3G SOT−23 10,000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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