Datasheet MPSH10 (ON Semiconductor) - 2

link to page 3 MPSH10
Preferred Device
VHF/UHF Transistors
NPN Silicon Features
• Pb−Free Packages are Available*
http://onsemi.com
COLLECTOR
MAXIMUM RATINGS
3
Rating Symbol Value Unit
Collector−Emitter Voltage V 1 CEO 25 Vdc BASE Collector−Base Voltage VCBO 30 Vdc Emitter−Base Voltage VEBO 3.0 Vdc 2 Total Device Dissipation @ T EMITTER A = 25°C PD 350 W Derate above 25°C 2.8 mW/°C Total Device Dissipation @ TC = 25°C PD 1.0 W Derate above 25°C 8.0 mW/°C Operating and Storage Junction TJ, Tstg −55 to +150 °C Temperature Range
THERMAL CHARACTERISTICS TO−92 Characteristic Symbol Max Unit CASE 29−11
1
STYLE 2
Thermal Resistance, Junction−to−Ambient 2 RqJA 200357 °C/W 3 Thermal Resistance, Junction−to−Case RqJC 125 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the
MARKING DIAGRAM
Recommended Operating Conditions may affect device reliability. MPS H10 AYWW G G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
February, 2007 − Rev. 3 MPSH10/D