NXP Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT VDS drain-source voltage − 7 V ID drain current − 40 mA IG1 gate 1 current − ±10 mA IG2 gate 2 current − ±10 mA Ptot total power dissipation see Fig.3 BF909 up to Tamb = 50 °C; note 1 − 200 mW BF909R up to Tamb = 40 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Note 1. Device mounted on a printed-circuit board. MLB935 250 handbook, halfpage Ptot (mW) 200 150 BF909R BF909 100 50 0 0 50 100 150 200 T ( C) o amb Fig.3 Power derating curves. Rev. 02 - 19 November 2007 3 of 12 Document Outline FEATURES APPLICATIONS DESCRIPTION PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS PACKAGE OUTLINES Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Revision history
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