Datasheet BF909, BF909R (NXP) - 7

NXP Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R MLB944 MLB945 20 40 handbook, halfpage handbook, halfpage I D V = 5 V GG I G1 (mA) V = 5 V (µA) GG 16 4.5 V 4 V 30 4.5 V 3.5 V 12 3 V 4 V 20 3.5 V 8 3 V 10 4 0 0 0 2 4 6 0 2 4 6 V (V) G2 S V (V) G2 S VDS = 5 V; Tj = 25 °C. VDS = 5 V; Tj = 25 °C. RG1 = 120 kΩ (connected to VGG). RG1 = 120 kΩ (connected to VGG). Fig.12 Drain current as a function of gate 2 voltage; Fig.13 Gate 1 current as a function of gate 2 typical values; see Fig.18. voltage; typical values; see Fig.18. MLB946 MLB947 10 2 10 3 10 3 handbook, halfpage y is y rs ϕrs (mS) (µS) (deg) ϕrs 10 10 2 10 2 b is yrs 1 10 10 g is 10 1 1 1 102 10 10 3 f (MHz) 102 10 10 3 f (MHz) VDS = 5 V; VG2 = 4 V. VDS = 5 V; VG2 = 4 V. ID = 15 mA; Tamb = 25 °C. ID = 15 mA; Tamb = 25 °C. Fig.14 Input admittance as a function of frequency; Fig.15 Reverse transfer admittance and phase as typical values. a function of frequency; typical values. Rev. 02 - 19 November 2007 7 of 12 Document Outline FEATURES APPLICATIONS DESCRIPTION PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS PACKAGE OUTLINES Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Revision history