NXP Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R MLB948 MLB949 10 2 10 2 10 handbook, halfpage y y fs os y ϕ fs fs (mS) bos (mS) (deg) 1 ϕfs 10 10 gos 10 1 1 1 10 2 102 10 10 3 102 10 10 3 f (MHz) f (MHz) VDS = 5 V; VG2 = 4 V. VDS = 5 V; VG2 = 4 V. ID = 15 mA; Tamb = 25 °C. ID = 15 mA; Tamb = 25 °C. Fig.16 Forward transfer admittance and phase as Fig.17 Output admittance as a function of a function of frequency; typical values. frequency; typical values. VAGC R1 10 k Ω C1 4.7 nF C3 12 pF R3 10 Ω C2 L1 R L DUT 50 Ω C5 ≈350 nH R 2.2 C4 GEN R2 4.7 nF R G1 pF 50 50 Ω Ω 4.7 nF V I V MLD151 GG VDS Fig.18 Cross-modulation test set-up. Rev. 02 - 19 November 2007 8 of 12 Document Outline FEATURES APPLICATIONS DESCRIPTION PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS STATIC CHARACTERISTICS DYNAMIC CHARACTERISTICS PACKAGE OUTLINES Legal information Data sheet status Definitions Disclaimers Trademarks Contact information Revision history
Купить BF909,215 на РадиоЛоцман.Цены — от 15 до 24 ₽
