Si2308DS Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter SymbolTestConditionsMin.Typ.Max.UnitStatic Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 µA 60 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.5 3.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 60 V, VGS = 0 V 0.5 Zero Gate Voltage Drain Current IDSS µA VDS = 60 V, VGS = 0 V, TJ = 55 °C 10 V ≥ DS 4.5 V, VGS = 10 V 6 On-State Drain Currenta ID(on) A V ≥ DS 4.5 V, VGS = 4.5 V 4 VGS = 10 V, ID = 2.0 A 0.125 0.16 Drain-Source On-State Resistancea RDS(on) Ω VGS = 4.5 V, ID = 1.7 A 0.155 0.22 Forward Transconductancea gfs VDS = 4.5 V, ID = 2.0 A 4.6 S Diode Forward Voltagea VSD IS = 1 A, VGS = 0 V 0.77 1.2 V Dynamic Total Gate Charge Qg 4.8 10 Gate-Source Charge Q V gs DS = 30 V, VGS = 10 V, ID = 2.0 A 0.8 nC Gate-Drain Charge Qgd 1.0 Gate Resistance Rg 0.5 3.3 Ω Input Capacitance Ciss 240 Output Capacitance C V oss DS = 25 V, VGS = 0 V, f = 1 MHz 50 pF Reverse Transfer Capacitance Crss 15 Switching Turn-On Delay Time td(on) 7 15 Rise Time tr VDD = 30 V, RL = 30 Ω 10 20 ns I Turn-Off Delay Time td(off) D ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω 17 35 Fall Time tf 6 15 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70797 2 S09-0133-Rev. D, 02-Feb-09
