Datasheet D44H8 - D44H11, D45H8 - D45H11 (STMicroelectronics) - 2

Absolute maximum ratings D44H8, D44H11, D45H8, D45H11 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit
Collector-emitter voltage (IB = 0) D44H8 - D45H8 60 V VCEO Collector-emitter voltage (IB = 0) D44H11 - D45H11 80 V VEBO Emitter-base voltage (IC = 0) 5 V IC Collector current 10 A ICM Collector peak current 20 A PTOT Total dissipation at Tcase = 25 °C 50 W TSTG Storage temperature -55 to 150 °C TJ Max. operating junction temperature 150 °C Note: For PNP types voltage and current values are negative.
Table 3. Thermal data Symbol Parameter Value Unit
RthJC Thermal resistance junction-case max 2.5 °C/W RthJA Thermal resistance junction-ambient max 62.5 °C/W 2/8 Doc ID 4213 Rev 5 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Absolute maximum ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Derating curve Figure 4. DC current gain (NPN) Figure 5. DC current gain (PNP) Figure 6. Collector-emitter saturation voltage (NPN) Figure 7. Collector-emitter saturation voltage (PNP) 3 Package mechanical data 4 Revision history Table 5. Document revision history