Datasheet D44H8 - D44H11, D45H8 - D45H11 (STMicroelectronics) - 3

D44H8, D44H11, D45H8, D45H11 Electrical characteristics 2 Electrical characteristics
Tcase = 25 °C; unless otherwise specified.
Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit
I Collector-emitter C = 100 mA V (1) CEO(sus) D44H8 - D45H8 60 - V sustaining voltage (IB = 0) D44H11 - D45H11 80 Collector cut-off current ICES V (V CE = rated VCEO - 10 µA BE = 0) Emitter cut-off current IEBO V (I EB = 5 V - 100 µA C = 0) V (1) Collector-emitter saturation CE(sat) I voltage C = 8 A IB = 0.4 A - 1 V V (1) Base-emitter saturation BE(sat) I voltage C = 8 A IB = 0.8 A - 1.5 V IC = 2 A_ VCE = 1 V 60 - h (1) FE DC current gain IC = 4 A_ _ VCE = 1 V 40 - 1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %. Note: For PNP types voltage and current values are negative. Doc ID 4213 Rev 5 3/8 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Absolute maximum ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Derating curve Figure 4. DC current gain (NPN) Figure 5. DC current gain (PNP) Figure 6. Collector-emitter saturation voltage (NPN) Figure 7. Collector-emitter saturation voltage (PNP) 3 Package mechanical data 4 Revision history Table 5. Document revision history