Datasheet CBRHD (Central Semiconductor)

CBRHD SERIES SURFACE MOUNT SILICON www.centra lsemi.com HIGH DENSITY 0.5 AMP DESCRIPTION: BRIDGE RECTIFIER
The CENTRAL SEMICONDUCTOR CBRHD series devices are silicon full wave bridge rectifiers mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips.
MARKING CODES: CBRHD-02: CBD2 CBRHD-04: CBD4 CBRHD-06: CBD6 CBRHD-10: CBD10 HD DIP CASE FEATURES: •
Efficient use of board space: requires only 42mm2 of
•
50% higher density (Amps/mm2) than the industry board space vs. 120mm2 of board space needed for standard 1.0 Amp surface mount bridge rectifier. industry standard 1.0 Amp surface mount bridge rectifier.
•
Glass passivated chips for high reliability.
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
CBRHD SYMBOL -02 -04 -06 -10* UNITS
Peak Repetitive Reverse Voltage VRRM 200 400 600 1000 V DC Blocking Voltage VR 200 400 600 1000 V RMS Reverse Voltage VR(RMS) 140 280 420 700 V Average Forward Current (TA=40°C) (Note 1) IO 0.5 A Average Forward Current (TA=40°C) (Note 2) IO 0.8 A Peak Forward Surge Current IFSM 30 A Operating & Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=Rated VRRM 5.0 µA IR VR=Rated VRRM, TA=125°C 500 µA VF IF=400mA 1.0 V CJ VR=4.0V, f=1.0MHz 20 pF Notes: (1) Mounted on Glass-Epoxy PCB. (2) Mounted on Ceramic PCB. * Available on special order, please consult factory. R6 (19-August 2020)