Datasheet 3N247-M (Central Semiconductor)

3N247-M SERIES w w w. c e n t r a l s e m i . c o m SILICON BRIDGE RECTIFIERS DESCRIPTION:
The CENTRAL SEMICONDUCTOR 3N247-M series types are silicon single phase, full wave bridge rectifiers designed for general purpose applications.
MARKING: FULL PART NUMBER CASE B-M MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
3N 3N 3N 3N 3N 3N SYMBOL 247-M 248-M 249-M 250-M 251-M 252-M UNITS
Peak Repetitive Reverse Voltage

VRRM

100

200

400

600

800 1000 V DC Blocking Voltage VR 100

200

400

600

800 1000 V RMS Reverse Voltage VR(RMS) 70 140 280 420 560 700 V Average Forward Current (TA=75°C) IO 1.5 A Peak Forward Surge Current IFSM 30 A Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
IR VR=Rated VRRM 10 μA VF IF=3.14A 1.3 V R3 (25-February 2013)