OKW: приборные корпуса из Германии

Datasheet SG1524, SG2524, SG3524 (Microchip) - 3

ПроизводительMicrochip
ОписаниеRegulating Pulse Width Modulator
Страниц / Страница9 / 3 — SG1524/SG2524. SG3524. Parameter. Test Conditions. Units. Min. Typ. Max. …
Формат / Размер файлаPDF / 866 Кб
Язык документаанглийский

SG1524/SG2524. SG3524. Parameter. Test Conditions. Units. Min. Typ. Max. Min. Typ. Max. Oscillator Section. Error Amplifier Section

SG1524/SG2524 SG3524 Parameter Test Conditions Units Min Typ Max Min Typ Max Oscillator Section Error Amplifier Section

Какими будут станции зарядки электромобилей в 2030 году: лучшие решения и мировой опыт для отечественных разработок

Модельный ряд для этого даташита

Текстовая версия документа

Electrical Characteristics (Continued)
SG1524/SG2524 SG3524 Parameter Test Conditions Units Min. Typ. Max. Min. Typ. Max. Oscillator Section
(Note 4) Initial Accuracy T = 25°C 36 40 44 36 40 44 kHz J MIN ≤ T ≤ MAX 34 46 34 46 kHz J Voltage Stability V = 8V to 40V 0.1 1 0.1 1 % IN Maximum Frequency R = 2kΩ, C = 1nF 200 400 200 400 kHz T T Sawtooth Peak Voltage V = 40V 3 3.8 3 3.8 V IN Sawtooth Valley Voltage V = 8V 0.6 1 1.2 0.6 1 1.2 V IN Clock Amplitude 3.2 3.2 V Clock Pulse Width 0.3 1.5 0.3 1.5 µs
Error Amplifier Section
(Note 5) Input Offset Voltage R ≤ 2kΩ 0.5 5 2 10 mV S Input Bias Current 1 10 1 10 µA Input Offset Current 1 2 µA DC Open Loop Gain R ≥10MΩ, T = 25°C 72 60 dB L J Output Low Level V - V ≥ 150mV 0.2 0.5 0.2 0.5 V PIN 1 PIN 2 Output High Level V - V ≥150mV 3.8 4.2 3.8 4.2 V PIN 2 PIN 1 Common Mode Rejection V = 1.8V to 3.4V 70 dB CM Supply Voltage Rejection V = 8V to 40V 55 dB IN Gain-Bandwidth Product (Note 7) T = 25°C 1 2 1 2 MHz J
P.W.M. Comparator
(Note 4) Minimum Duty Cycle V = 0.5V 0 0 % COMP Maximum Duty Cycle V = 3.6V 45 49 45 49 % COMP
Current Limit Amplifier Section
(Note 6) Sense Voltage T = 25°C 190 200 210 180 200 220 mV J Input Bias Current 200 200 µA
Shutdown Section
Threshold Voltage T = 25°C 0.5 0.8 1.2 0.5 0.8 1.2 V J MIN ≤ T ≤ MAX 0.2 1.8 0.2 1.8 V J
Output Section
(each transistor) Collector Leakage Current V = 40V 50 50 µA CE Collector Saturation Voltage I = 50mA 2 2 V C Emitter Output Voltage I = 50mA 17 17 V E Collector Voltage Rise Time R = 2kΩ 0.4 0.4 µs C Collector Voltage Fall Time R = 2kΩ 0.2 0.2 µs C
Power Consumption
Standby Current V = 40V 7 10 7 10 mA IN Note 4. F = 40kHz (R = 2.9kΩ, C = .01µF) OSC T T Note 5. V = 2.5V CM Note 6. V = 0V CM Note 7. These parameters, although guaranteed over the recommended operating conditions, are not 100% tested in production. 3 Document Outline Regulating Pulse Width Modulator Description Features High Reliability Features Block Diagram Absolute Maximum Ratings Thermal Data Recommended Operating Conditions Electrical Characteristics Electrical Characteristics (Continued) Application Notes Application Notes (Continued) Connection Diagrams and Ordering Information Package Outline Dimensions Package Outline Dimensions (continued)
Электронные компоненты. Бесплатная доставка по России