Datasheet PMEG3010EH, PMEG3010EJ, PMEG3010ET (Nexperia) - 4

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Nexperia PMEG3010EH/EJ/ET 1 A very low VF MEGA Schottky barrier rectifiers 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from in free air [1] junction to ambient PMEG3010EH [2] - - 330 K/W [3] - - 150 K/W PMEG3010EJ [2] - - 350 K/W [3] - - 150 K/W PMEG3010ET [2] - - 440 K/W [3] - - 300 K/W R [4] th(j-sp) thermal resistance from junction to solder point PMEG3010EH - - 60 K/W PMEG3010EJ - - 55 K/W PMEG3010ET - - 120 K/W [1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [4] Soldering point of cathode tab.
7. Characteristics Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VF forward voltage [1] IF = 0.1 mA - 90 130 mV IF = 1 mA - 150 200 mV IF = 10 mA - 215 250 mV IF = 100 mA - 285 340 mV IF = 500 mA - 380 430 mV IF = 1000 mA - 450 560 mV IR reverse current VR = 10 V - 12 30 µA VR = 30 V - 40 150 µA Cd diode capacitance VR = 1 V; - 55 70 pF f = 1 MHz [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PMEG3010EH_EJ_ET_4 © Nexperia B.V. 2017. All rights reserved
Product data sheet Rev. 04 — 20 March 2007 4 of 11
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents