Si2369DSwww.vishay.com Vishay Siliconix
P-Channel 30 V (D-S) MOSFET FEATURES SOT-23 (TO-236)• TrenchFET® power MOSFET D • 100 % Rg tested 3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 S
APPLICATIONS1 • For mobile computing S G - Load switch Top View - Notebook adaptor switch
Marking code:H9 - DC/DC converter
PRODUCT SUMMARYG VDS (V) -30 RDS(on) max. () at VGS = -10 V 0.029 RDS(on) max. () at VGS = -6 V 0.034 RDS(on) max. () at VGS = -4.5 V 0.040 D Qg typ. (nC) 11.4 P-Channel MOSFET ID (A) a -7.6 Configuration Single
ORDERING INFORMATIONPackage SOT-23 Lead (Pb)-free and halogen-free Si2369DS-T1-GE3
ABSOLUTE MAXIMUM RATINGS(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNITDrain-source voltage VDS -30 V Gate-source voltage VGS ± 20 TC = 25 °C -7.6 TC = 70 °C -6.1 Continuous drain current (TJ = 150 °C) ID TA = 25 °C -5.4 b, c TA = 70 °C -4.3 b, c A Pulsed drain current (t = 100 μs) IDM -80 TC = 25 °C -2.1 Continuous source-drain diode current IS TA = 25 °C -1 b, c TC = 25 °C 2.5 TC = 70 °C 1.6 Maximum power dissipation PD W TA = 25 °C 1.25 b, c TA = 70 °C 0.8 b, c Operating junction and storage temperature range TJ, Tstg -55 to +150 °C
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNITMaximum junction-to-ambient b, d t 5 s RthJA 75 100 °C/W Maximum junction-to-foot (drain) Steady state RthJF 40 50
Notesa. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 5 s d. Maximum under steady state conditions is 166 °C/W S13-1663-Rev. A, 29-Jul-13
1Document Number: 62865 For technical questions, contact:
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