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Datasheet Si2369DS (Vishay) - 5

ПроизводительVishay
ОписаниеP-Channel 30 V (D-S) MOSFET
Страниц / Страница9 / 5 — Si2369DS. TYPICAL CHARACTERISTICS. Current Derating a. Power, …
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Язык документаанглийский

Si2369DS. TYPICAL CHARACTERISTICS. Current Derating a. Power, Junction-to-Foot. Power, Junction-to-Ambient. Note

Si2369DS TYPICAL CHARACTERISTICS Current Derating a Power, Junction-to-Foot Power, Junction-to-Ambient Note

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Si2369DS
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 8.8 6.6 ) (A Current 4.4 Drain - I D 2.2 0 0 25 50 75 100 125 150 T - Case Temperature (°C) C
Current Derating a
3.1 1.0 2.48 0.8 ) 1.86 ) W W r ( r ( e e 0.5 w w Po 1.24 Po 0.3 0.62 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T - Case Temperature (°C) T - Ambient Temperature (°C) C A
Power, Junction-to-Foot Power, Junction-to-Ambient Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S13-1663-Rev. A, 29-Jul-13
5
Document Number: 62865 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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