NPN 2N3019 – 2N3020 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case . They are intended for high-current, high-frequency amplifier applications. They feature high gain and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current PD Total Power Dissipation @ Tamb = 25° PD Total Power Dissipation @ Tcase= 25° TJ Junction Temperature TStg Storage Temperature range 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 Value Unit 80 V 140 V 7 V 1 A 0.8 Watts 5 200 °C -65 to +200 °C Value Unit 35 °C/W 219 °C/W THERMAL CHARACTERISTICS Symbol Ratings RthJ-a Thermal Resistance, Junction to ambient in free air RthJ-c Thermal Resistance, Junction to case COMSET SEMICONDUCTORS 2N3019 2N3020 2N3019 2N3020 1/4
