link to page 1 PMF170XP20 V, 1 A P-channel Trench MOSFET29 October 2013Product data sheet1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low RDSon • Very fast switching • Trench MOSFET technology 3. Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 4. Quick reference dataTable 1.Quick reference dataSymbolParameterConditionsMinTypMaxUnit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current VGS = -4.5 V; Tamb 25 °C [1] - - -1 A Static characteristics RDSon drain-source on-state VGS = -4.5 V; ID = -1 A; Tj = 25 °C - 175 200 mΩ resistance [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information
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