Datasheet PMF170XP (Nexperia) - 6

Nexperia PMF170XP 20 V, 1 A P-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit
IGSS gate leakage current VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nA VGS = 12 V; VDS = 0 V; Tj = 25 °C - - -100 nA RDSon drain-source on-state VGS = -4.5 V; ID = -1 A; Tj = 25 °C - 175 200 mΩ resistance VGS = -4.5 V; ID = -1 A; Tj = 150 °C - 250 284 mΩ VGS = -2.5 V; ID = -1 A; Tj = 25 °C - 240 300 mΩ gfs forward VDS = -5 V; ID = -1 A; Tj = 25 °C - 1.9 - S transconductance
Dynamic characteristics
QG(tot) total gate charge VDS = -10 V; ID = -1 A; VGS = -4.5 V; - 2.6 3.9 nC Q T GS gate-source charge j = 25 °C - 0.63 - nC QGD gate-drain charge - 0.53 - nC Ciss input capacitance VDS = -10 V; f = 1 MHz; VGS = 0 V; - 280 - pF C T oss output capacitance j = 25 °C - 43 - pF Crss reverse transfer - 30 - pF capacitance td(on) turn-on delay time VDS = -10 V; ID = -1 A; VGS = -4.5 V; - 10 - ns t R r rise time G(ext) = 6 Ω; Tj = 25 °C - 16 - ns td(off) turn-off delay time - 31 - ns tf fall time - 13 - ns
Source-drain diode
VSD source-drain voltage IS = -0.4 A; VGS = 0 V; Tj = 25 °C - -0.7 -1.2 V PMF170XP All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet 29 October 2013 6 / 15
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information