Datasheet TCK128BG (Toshiba) - 3

TCK128BG Electrical Characteristics DC Characteristics
Ta = -40 to 85°C Ta = 25°C (Note 2) Characteristics Symbol Test Condition Unit Min Typ. Max Min Typ. Max Quiescent current VIN 5.5 VVCT = 0 V, 4.1 I  0.08 8  100 nA (ON state) Q IOUT = 0 mA (Note 3) VIN  VCT = 1.0 V,  0.6     nA VOUT = OPEN IQ(OFF) Standby current VIN  VCT = 4.5 V,  86 3    nA (OFF state) + VOUT = OPEN (Note 3) ISD(OFF) VIN  VCT = 5.5 V,  148 13 45  550 nA VOUT = OPEN (Note 3) VIN  5.0 V, IOUT  -0.5 A  46    68 VIN  3.3 V, IOUT  -0.5 A  58    87 On resistance RON VIN  1.8 V, IOUT  -0.5 A  106    169 m VIN  1.2 V, IOUT  -0.2 A  210    450 VIN  1.0 V, IOUT  -0.05 A  343     Discharge on resistance RSD VIN  3.3 V, IOUT  0.01 A  109     Note 2 : This parameter is warranted by design. Note 3 : Ta = 85°C © 2021 3 2021-10-28 Toshiba Electronic Devices & Storage Corporation