Datasheet BUZ71 (STMicroelectronics) - 2

BUZ71 THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 2.5 oC/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 oC/W
AVALANCHE CHARACTERISTICS Symbo l Parameter Valu e Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 17 A (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy 50 mJ (starting Tj = 25 oC, ID = IAR, VDD = 25 V)
ELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) OFF
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 250 µA VGS = 0 50 V Breakdown Voltage IDSS Zero Gat e Voltage VDS = Max Rating 1 µA Drain Current (VGS = 0) VDS = Max Rating Tj = 125 oC 10 µA IGSS Gat e-body Leakage VGS = ± 20 V ± 100 nA Current (VDS = 0) ON (∗
) Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
VGS(th) Gat e Threshold Voltage VDS = VGS ID = 1 mA 2. 1 3 4 V RDS(on) Static Drain-source On VGS = 10 V ID = 9 A 0.085 0. 1 Ω Resistance DYNAMIC
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
gfs (∗) Forward VDS = 25 V ID = 9 A 4 7.7 S Transconductance Ciss Input Capacitance VDS = 25 V f = 1 MHz VGS = 0 760 pF Coss Out put Capacitance 100 pF Crss Reverse Transfer 30 pF Capacitance SWITCHING
Symbo l Parameter Test Con ditions Min. Typ. Max. Unit
td(on) Turn-on Time VDD = 30 V ID = 8 A 20 ns tr Rise Time RGS = 50 Ω VGS = 10 V 65 ns td(off) Turn-off Delay T ime 70 ns tf Fall T ime 35 ns 2/8