BUZ 171Avalanche energy E = ƒ(T ) Drain-source breakdown voltage AS j parameter: ID = -8 A, VDD = -25 V V(BR)DSS = ƒ(Tj) R = 25 Ω, L = 1.1 mH GS 75 -60 mJ V E 60 V -57 AS (BR)DSS 55 -56 50 -55 45 -54 40 -53 35 -52 30 -51 25 -50 20 -49 15 -48 10 -47 5 -46 0 -45 20 40 60 80 100 120 °C 160 -60 -20 20 60 100 °C 160 T T j j Semiconductor Group 8 07/96
