link to page 3 NXP SemiconductorsProduct data sheetNPN high-voltage transistorsBF820; BF822FEATURESPINNING • Low current (max. 50 mA) PINDESCRIPTION • High voltage (max. 300 V). 1 base 2 emitter APPLICATIONS 3 collector • Telephony and professional communication equipment. DESCRIPTION NPN high-voltage transistor in a SOT23 plastic package. handbook, halfpage PNP complements: BF821; BF823. 3 3 MARKING 1 TYPE NUMBERMARKING CODE (1) 2 BF820 1V* 1 2 BF822 1X* Top view MAM255 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. * = W : Made in China. ORDERING INFORMATIONPACKAGETYPENUMBERNAMEDESCRIPTIONVERSION BF820 − plastic surface mounted package; 3 leads SOT23 BF822 − plastic surface mounted package; 3 leads SOT23 2004 Jan 16 2 Document Outline Features Applications Description Marking Pinning Ordering information Limiting values Thermal characteristics Characteristics Package outline Data sheet status Disclaimers
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