PROCESS CPZ19 Zener Diode 0.5 Watt Zener Diode ChipPROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.7 x 17.7 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 11 x 11 MILS Top Side Metalization Al - 13,000Å Back Side Metalization Au - 14,000Å GEOMETRYGROSS DIE PER 4 INCH WAFER 36,642 PRINCIPAL DEVICE TYPES CMPZ5235B THRU CMPZ5261B BACKSIDE CATHODE R0 R6 (22-February 2012) w w w. c e n t r a l s e m i . c o m
