Datasheet CMPZ5235B - CMPZ5261B (Central Semiconductor)

PROCESS
CPZ19 Zener Diode
0.5 Watt Zener Diode Chip PROCESS DETAILS
Process EPITAXIAL PLANAR Die Size 17.7 x 17.7 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 11 x 11 MILS Top Side Metalization Al - 13,000Å Back Side Metalization Au - 14,000Å
GEOMETRY GROSS DIE PER 4 INCH WAFER
36,642
PRINCIPAL DEVICE TYPES
CMPZ5235B THRU CMPZ5261B BACKSIDE CATHODE R0 R6 (22-February 2012)
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