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Datasheet ADG658, ADG659 (Analog Devices) - 5

ПроизводительAnalog Devices
Описание+3 V/+5 V/±5 V CMOS 4-and 8-Channel Analog Multiplexers
Страниц / Страница20 / 5 — Data Sheet. ADG658/ADG659. 5 V SINGLE SUPPLY. Table 2. B Version. Y …
ВерсияD
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Язык документаанглийский

Data Sheet. ADG658/ADG659. 5 V SINGLE SUPPLY. Table 2. B Version. Y Version. −40°C. Parameter. +25°C. to +85°C. to +125°C. Unit

Data Sheet ADG658/ADG659 5 V SINGLE SUPPLY Table 2 B Version Y Version −40°C Parameter +25°C to +85°C to +125°C Unit

Выбираем схему BMS для заряда литий-железофосфатных (LiFePO4) аккумуляторов

Модельный ряд для этого даташита

Текстовая версия документа

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Data Sheet ADG658/ADG659 5 V SINGLE SUPPLY
VDD = 5 V ± 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 2. B Version Y Version −40°C −40°C Parameter +25°C to +85°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range 0 to VDD V VDD = 4.5 V, VSS = 0 V On Resistance (RON) 85 Ω typ VS = 0 V to 4.5 V, IS = 1 mA; see Figure 21 150 160 200 Ω max On Resistance Match between 4.5 Ω typ VS = 3.5 V, IS = 1 mA Channels (∆RON) 8 9 10 Ω max On Resistance Flatness (RFLAT(ON)) 13 14 16 Ω typ VDD = 5 V, VSS = 0 V, VS = 1.5 V to 4 V, IS = 1 mA LEAKAGE CURRENTS VDD = 5.5 V Source OFF Leakage IS (OFF) ±0.005 nA typ VS = 1 V/4.5 V, VD = 4.5 V/1 V; see Figure 22 ±0.2 ±5 nA max Drain OFF Leakage ID (OFF) ±0.005 nA typ VS = 1 V/4.5 V, VD = 4.5 V/1 V; see Figure 23 ADG658 ±0.2 ±5 nA max ADG659 ±0.1 ±2.5 nA max Channel ON Leakage ID, IS (ON) ±0.005 nA typ VS = VD = 1 V or 4.5 V, see Figure 24 ADG658 ±0.2 ±5 nA max ADG659 ±0.1 ±2.5 nA max DIGITAL INPUTS Input High Voltage, VINH 2.4 V min Input Low Voltage, VINL 0.8 V max Input Current IINL or IINH 0.005 µA typ VIN = VINL or VINH ±1 µA max CIN, Digital Input Capacitance 2 pF typ DYNAMIC CHARACTERISTICS1 tTRANSITION 120 ns typ RL = 300 Ω, CL = 35 pF 200 270 300 ns max VS = 3 V; see Figure 25 tON (EN) 120 ns typ RL = 300 Ω, CL = 35 pF 190 245 280 ns max VS = 3 V; see Figure 27 tOFF (EN) 35 ns typ RL = 300 Ω, CL = 35 pF 50 60 70 ns max VS = 3 V; see Figure 27 Break-Before-Make Time Delay, tBBM 100 ns typ RL = 300 Ω, CL = 35 pF 10 ns min VS1 = VS2 = 3 V; see Figure 26 Charge Injection 0.5 pC typ VS = 2.5 V, RS = 0 Ω, CL = 1 nF; see Figure 28 1 pC max Off Isolation −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29 Channel-to-Channel Crosstalk −90 dB typ RL = 50 Ω, CL = 5 pF; f = 1 MHz; see Figure 31 (ADG659) −3 dB Bandwidth ADG658 180 MHz typ RL = 50 Ω, CL = 5 pF; see Figure 30 ADG659 330 MHz typ CS (OFF) 5 pF typ f = 1 MHz CD (OFF) ADG658 29 pF typ f = 1 MHz ADG659 15 pF typ f = 1 MHz Rev. D | Page 5 of 20 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION PRODUCT HIGHLIGHTS REVISION HISTORY SPECIFICATIONS DUAL SUPPLY 5 V SINGLE SUPPLY 2.7 V TO 3.6 V SINGLE SUPPLY ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TERMINOLOGY TEST CIRCUITS OUTLINE DIMENSIONS ORDERING GUIDE AUTOMOTIVE PRODUCTS
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