Смарт-ЭК - поставщик алюминиевых корпусов LinTai

Datasheet ADG636 (Analog Devices) - 5

ПроизводительAnalog Devices
Описание1 pC Charge Injection, 100 pA Leakage, CMOS, ±5 V/+5 V/+3 V Dual SPDT Switch
Страниц / Страница16 / 5 — ADG636. SINGLE SUPPLY. Table 2. Parameter. +25°C. −40°C to +85°C. −40°C …
ВерсияB
Формат / Размер файлаPDF / 505 Кб
Язык документаанглийский

ADG636. SINGLE SUPPLY. Table 2. Parameter. +25°C. −40°C to +85°C. −40°C to +125°C. Unit. Test Conditions/Comments

ADG636 SINGLE SUPPLY Table 2 Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments

38 предложений от 18 поставщиков
Интегральные микросхемы Интерфейсы и стыки — аналоговые переключатели, (де)мультиплексоры
ЧипСити
Россия
ADG636YRUZ-REEL7
Analog Devices
256 ₽
Зенер
Россия и страны ТС
ADG636YRUZ-REEL7
Analog Devices
от 281 ₽
LifeElectronics
Россия
ADG636YRUZ-REEL
Analog Devices
по запросу
ЗУМ-СМД
Россия
ADG636YRUZ-REEL7
Analog Devices
по запросу

Модельный ряд для этого даташита

Текстовая версия документа

link to page 13 link to page 13 link to page 13 link to page 13 link to page 13 link to page 13 link to page 13 link to page 13 link to page 13 link to page 13 link to page 13 link to page 13 link to page 13 link to page 13 link to page 13 link to page 13 link to page 14 link to page 14 link to page 14 link to page 14 link to page 6
ADG636 SINGLE SUPPLY
VDD = 5 V ± 10%, VSS = 0 V, GND = 0 V. All specifications −40°C to +125°C, unless otherwise noted.
Table 2. Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range 0 V to VDD V VDD = 4.5 V, VSS = 0 V On Resistance, RON 210 Ω typ VS = 3.5 V, IDS = −1 mA, Figure 14 290 350 380 Ω max VS = 3.5 V, IDS = −1 mA, Figure 14 On Resistance Match Between Channels, ΔRON 3 Ω typ VS = 3.5 V, IDS = −1 mA 12 13 Ω max VS = 3.5 V, IDS = −1 mA LEAKAGE CURRENTS VDD = 5.5 V Source Off Leakage, IS (Off ) ±0.01 nA typ VS = 1 V/4.5 V, VD = 4.5 V/1 V, Figure 15 ±0.1 ±0.25 ±2 nA max VS = 1 V/4.5 V, VD = 4.5 V/1 V, Figure 15 Drain Off Leakage, ID (Off ) ±0.01 nA typ VS = 1 V/4.5 V, VD = 4.5 V/1 V, Figure 15 ±0.1 ±0.25 ±2 nA max VS = 1 V/4.5 V, VD = 4.5 V/1 V, Figure 15 Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = 4.5 V/1 V, Figure 16 ±0.1 ±0.25 ±6 nA max VS = VD = 4.5 V/1 V, Figure 16 DIGITAL INPUTS Input High Voltage, VINH 2.4 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.005 μA typ VIN = VINL or VINH ±0.1 μA max VIN = VINL or VINH Digital Input Capacitance, CIN 2 pF typ DYNAMIC CHARACTERISTICS1 Transition Time 90 ns typ VS1A = 3 V, VS1B = 0 V, RL = 300 Ω, CL = 35 pF, Figure 17 150 185 210 ns max VS1A = 3 V, VS1B = 0 V, RL = 300 Ω, CL = 35 pF, Figure 17 tON Enable 135 ns typ RL = 300 Ω, CL = 35 pF, VS = 3 V, Figure 19 180 235 275 ns max RL = 300 Ω, CL = 35 pF, VS = 3 V, Figure 19 tOFF Enable 70 ns typ RL = 300 Ω, CL = 35 pF, VS = 3 V, Figure 19 105 120 135 ns max RL = 300 Ω, CL = 35 pF, VS = 3 V, Figure 19 Break-Before-Make Time Delay, tBBM 30 ns typ RL = 300 Ω, CL = 35 pF, VS = 3 V, Figure 18 10 ns min RL = 300 Ω, CL = 35 pF, VS = 3 V, Figure 18 Charge Injection 0.3 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF, Figure 20 Off Isolation −60 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz, Figure 21 Channel-to-Channel Crosstalk −65 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz, Figure 23 Bandwidth −3 dB 530 MHz typ RL = 50 Ω, CL = 5 pF, Figure 22 CS (Off ) 5 pF typ f = 1 MHz CD (Off ) 8 pF typ f = 1 MHz CD (On), CS (On) 8 pF typ f = 1 MHz Rev. B | Page 5 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION PRODUCT HIGHLIGHTS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS DUAL SUPPLY SINGLE SUPPLY ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS TYPICAL PERFORMANCE CHARACTERISTICS TEST CIRCUITS TERMINOLOGY OUTLINE DIMENSIONS ORDERING GUIDE
ТМ Электроникс. Электронные компоненты и приборы. Скидки, кэшбэк и бесплатная доставка