Поставки продукции Nuvoton по официальным каналам

Datasheet ADG733, ADG734 (Analog Devices) - 4

ПроизводительAnalog Devices
ОписаниеCMOS, 2.5 Ω Low Voltage, Triple/Quad SPDT Switches
Страниц / Страница12 / 4 — ADG733/ADG734–SPECIFICATIONS1. DUAL SUPPLY (VDD = +2.5 V. 10%, VSS = –2.5 …
ВерсияB
Формат / Размер файлаPDF / 209 Кб
Язык документаанглийский

ADG733/ADG734–SPECIFICATIONS1. DUAL SUPPLY (VDD = +2.5 V. 10%, VSS = –2.5 V. 10%, GND = 0 V, unless otherwise noted.)

ADG733/ADG734–SPECIFICATIONS1 DUAL SUPPLY (VDD = +2.5 V 10%, VSS = –2.5 V 10%, GND = 0 V, unless otherwise noted.)

39 предложений от 19 поставщиков
Интегральные микросхемы Интерфейсы и стыки — аналоговые переключатели, (де)мультиплексоры
EIS Components
Весь мир
ADG733BRQZ-REEL7
Analog Devices
65 ₽
AllElco Electronics
Весь мир
ADG733BRQZ
Analog Devices
от 68 ₽
ЧипСити
Россия
ADG733BRQZ-REEL
Analog Devices
173 ₽
T-electron
Россия и страны СНГ
ADG733BRQZ
Analog Devices
191 ₽

Модельный ряд для этого даташита

Текстовая версия документа

link to page 4 link to page 4
ADG733/ADG734–SPECIFICATIONS1 DUAL SUPPLY (VDD = +2.5 V 10%, VSS = –2.5 V 10%, GND = 0 V, unless otherwise noted.) B Version –40 C Parameter +25 C to +85 C Unit Test Conditions/Comments
ANALOG SWITCH Analog Signal Range VSS to VDD V On Resistance (RON) 2.5 Ω typ VS = VSS to VDD, IDS = 10 mA; 4.5 5.0 Ω max Test Circuit 1 On Resistance Match between 0.1 Ω typ VS = VSS to VDD, IDS = 10 mA Channels (∆RON) 0.4 Ω max On Resistance Flatness (RFLAT(ON)) 0.5 Ω typ VS = VSS to VDD, IDS = 10 mA 1.2 Ω max LEAKAGE CURRENTS VDD = +2.75 V, VSS = –2.75 V Source OFF Leakage IS (OFF) ±0.01 nA typ VS = +2.25 V/–1.25 V, VD = –1.25 V/+2.25 V; ±0.1 ±0.3 nA max Test Circuit 2 Channel ON Leakage ID, IS (ON) ±0.01 nA typ VS = VD = +2.25 V/–1.25 V, Test Circuit 3 ±0.1 ±0.5 nA max DIGITAL INPUTS Input High Voltage, VINH 1.7 V min Input Low Voltage, VINL 0.7 V max Input Current IINL or IINH 0.005 µA typ VIN = VINL or VINH ±0.1 µA max CIN, Digital Input Capacitance 4 pF typ DYNAMIC CHARACTERISTICS2 tON 21 ns typ RL = 300 Ω, CL = 35 pF; 35 ns max VS = 1.5 V, Test Circuit 4 tOFF 10 ns typ RL = 300 Ω, CL = 35 pF; 16 ns max VS = 1.5 V, Test Circuit 4 ADG733 tON(EN) 21 ns typ RL = 300 Ω, CL = 35 pF; 40 ns max VS = 1.5 V, Test Circuit 5 tOFF(EN) 10 ns typ RL = 300 Ω, CL = 35 pF; 16 ns max VS = 1.5 V, Test Circuit 5 Break-Before-Make Time Delay, tD 13 ns typ RL = 300 Ω, CL = 35 pF; 1 ns min VS = 1.5 V, Test Circuit 6 Charge Injection ±5 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; Test Circuit 7 Off Isolation –72 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 8 Channel-to-Channel Crosstalk –67 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; Test Circuit 9 –3 dB Bandwidth 200 MHz typ RL = 50 Ω, CL = 5 pF, Test Circuit 10 CS (OFF) 11 pF typ f = 1 MHz CD, CS (ON) 34 pF typ f = 1 MHz POWER REQUIREMENTS VDD = 2.75 V IDD 0.001 µA typ Digital Inputs = 0 V or 2.75 V 1.0 µA max ISS 0.001 µA typ VSS = –2.75 V 1.0 µA max Digital Inputs = 0 V or 2.75 V NOTES 1Temperature range is as follows: B Version: –40°C to +85°C. 2Guaranteed by design, not subject to production test. Specifications subject to change without notice. –4– REV. B Document Outline Features Applications General Description Functional Block Diagrams Product Highlights Specifications Absolute Maximum Ratings Pin Configurations Terminology Typical Performance Characteristics Test Circuits Outline Dimensions Ordering Guide Revision History
ТМ Электроникс. Электронные компоненты и приборы. Скидки, кэшбэк и бесплатная доставка