Datasheet TCET1100, TCET1100G (Vishay) - 4

TCET1100, TCET1100G
www.vishay.com Vishay Semiconductors
MAXIMUM SAFETY RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT
Forward current IF - - 130 mA
OUTPUT
Power dissipation Pdiss - - 265 mW
COUPLER
Rated impulse voltage VIOTM - - 6 kV Safety temperature Tsi - - 150 °C
Note
• According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits
INSULATION RATED PARAMETERS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Partial discharge test voltage - 100 %, t routine test test = 1 s Vpd 1.6 - - kV Partial discharge test voltage - t V Tr = 60 s, ttest = 10 s, IOTM 6 - - kV lot test (sample test) (see figure 2) Vpd 1.3 - - kV VIO = 500 V RIO 1012 - - Ω V Insulation resistance IO = 500 V, Tamb = 100 °C RIO 1011 - - Ω VIO = 500 V, Tamb = 150 °C R (construction test only) IO 109 - - Ω V 300 IOTM t1, t2 = 1 s to 10 s Phototransistor 250 t3, t4 = 1 s Psi (mW) ttest = 10 s t 200 stres = 12 s Vpd 150 VIOWM VIORM 100 IR-diode 50 - Total Power Dissipation (mW) Isi (mA) tot 0 P 0 t3 ttest t4 0 25 50 75 100 125 150 t1 tTr = 60 s t2 tstres 13930 949182-1 Tsi - Safety Temperature (°C) t Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-5 / DIN EN 60747-; IEC 60747 Rev. 2.4, 13-Jan-2021
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