Datasheet MBT3946DW1T1G, SMBT3946DW1T1G (ON Semiconductor) - 7

MBT3946DW1T1G, SMBT3946DW1T1G (PNP)
3 V 3 V < 1 ns +9.1 V 275 275 < 1 ns +0.5 V 10 k 10 k 0 Cs < 4 pF* 1N916 Cs < 4 pF* 10.6 V 300 ns 10 < t1 < 500 ms DUTY CYCLE = 2% t 10.9 V 1 DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors
Figure 20. Delay and Rise Time Figure 21. Storage and Fall Time Equivalent Test Circuit Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C TJ = 125°C 10 5000 VCC = 40 V (PNP) 3000 (PNP) 7.0 IC/IB = 10 2000 5.0 Cobo 1000 700 ANCE (pF) Cibo 3.0 500 ACIT Q, CHARGE (pC) 300 CAP 2.0 200 QT QA 100 70 1.0 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 REVERSE BIAS (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 22. Capacitance Figure 23. Charge Data
500 500 (PNP) IC/IB = 10 (PNP) V 300 300 CC = 40 V I 200 200 B1 = IB2 IC/IB = 20 100 100 70 70 50 tr @ VCC = 3.0 V TIME (ns) 50 ALL TIME (ns) 30 15 V 30 t , F f 20 20 IC/IB = 10 40 V 10 2.0 V 10 7 t 7 d @ VOB = 0 V 5 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 24. Turn-On Time Figure 25. Fall Time http://onsemi.com 7