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Datasheet LM13600 (National Semiconductor) - 3

ПроизводительNational Semiconductor
ОписаниеDual Operational Transconductance Amplifiers with Linearizing Diodes and Buffers
Страниц / Страница24 / 3 — Electrical Characteristics. Note 1:. Note 2:. Note 3:. Note 4:. Note 5:. …
Формат / Размер файлаPDF / 656 Кб
Язык документаанглийский

Electrical Characteristics. Note 1:. Note 2:. Note 3:. Note 4:. Note 5:. Note 6:. Schematic Diagram

Electrical Characteristics Note 1: Note 2: Note 3: Note 4: Note 5: Note 6: Schematic Diagram

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Electrical Characteristics
(Note 5) (Continued)
Note 1:
“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits.
Note 2:
For selections to a supply voltage above ±22V, contact factory.
Note 3:
For operating at high temperatures, the device must be derated based on a 150˚C maximum junction temperature and a thermal resistance of 175˚C/W which applies for the device soldered in a printed circuit board, operating in still air.
Note 4:
Buffer output current should be limited so as to not exceed package dissipation.
Note 5:
These specifications apply for VS = ±15V, TA = 25˚C, amplifier bias current (IABC) = 500 µA, pins 2 and 15 open unless otherwise specified. The inputs to the buffers are grounded and outputs are open.
Note 6:
These specifications apply for VS = ±15V, IABC = 500 µA, ROUT = 5 kΩ connected from the buffer output to −VS and the input of the buffer is connected to the transconductance amplifier output.
Schematic Diagram One Operational Transconductance Amplifier
DS007980-1
Typical Performance Characteristics Input Offset Voltage Input Offset Current Input Bias Current
DS007980-39 DS007980-40 DS007980-41 3 www.national.com
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