Datasheet 2N5087 (ON Semiconductor) - 5
Производитель | ON Semiconductor |
Описание | Amplifier Transistor PNP Silicon |
Страниц / Страница | 8 / 5 — 2N5087. TYPICAL STATIC CHARACTERISTICS. Figure 6. DC Current Gain. Figure … |
Версия | 5 |
Формат / Размер файла | PDF / 259 Кб |
Язык документа | английский |
2N5087. TYPICAL STATIC CHARACTERISTICS. Figure 6. DC Current Gain. Figure 7. Collector Saturation Region

10 предложений от 10 поставщиков TRANSISTOR SS PNP 50V 50MA TO-92 |
| 2N5087G
| 2 045 ₽ | |
| 2N5087G ON Semiconductor | по запросу | |
| 2N5087G ON Semiconductor | по запросу | |
| 2N5087G ON Semiconductor | по запросу | |
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2N5087 TYPICAL STATIC CHARACTERISTICS
400 TJ = 125°C 25°C 200 -55°C 100 FE 80 h , DC CURRENT GAIN 60 VCE = 1.0 V VCE = 10 V 40 0.003 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA)
Figure 6. DC Current Gain
1.0 TS) 100 T T I A = 25°C A = 25°C B = 400 mA (VOL PULSE WIDTH = 300 ms 350 mA 0.8 80 DUTY CYCLE ≤ 2.0% TAGE 300 mA 250 mA IC = 1.0 mA 10 mA 50 mA 100 mA 0.6 60 200 mA 150 mA 0.4 40 100 mA 0.2 , COLLECTOR CURRENT (mA) 20 I C 50 mA , COLLECTOR-EMITTER VOL CEV 0 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0 5.0 10 15 20 25 30 35 40 IB, BASE CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Collector Saturation Region Figure 8. Collector Characteristics
1.4 1.6 T C) J = 25°C ° *APPLIES for IC/IB ≤ hFE/2 1.2 0.8 TS) 1.0 *q 25°C to 125°C VC for VCE(sat) (VOL 0 0.8 - 55°C to 25°C VBE(sat) @ IC/IB = 10 TAGE 0.6 0.8 , VOL VBE(on) @ VCE = 1.0 V V TURE COEFFICIENTS (mV/ 25°C to 125°C 0.4 1.6 0.2 q TEMPERA VB for VBE - 55°C to 25°C V , CE(sat) @ IC/IB = 10 Vθ 0 2.4 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 9. “On” Voltages Figure 10. Temperature Coefficients http://onsemi.com 4