BPV11Fwww.vishay.com Vishay Semiconductors
Silicon NPN Phototransistor FEATURES• Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters 12784 • Fast response times • Angle of half sensitivity: = ± 15° • Base terminal connected
DESCRIPTION• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 BPV11F is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal
APPLICATIONSand daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. • Detector for industrial electronic circuitry, measurement and control
PRODUCT SUMMARY COMPONENT Ica (mA)
(deg) 0.5 (nm)BPV11F 9 ± 15 900 to 980
Note• Test condition see table “Basic Characteristics”
ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORMBPV11F Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾
Note• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNITCollector base voltage VCBO 80 V Collector emitter voltage VCEO 70 V Emitter base voltage VEBO 5 V Collector current IC 50 mA Collector peak current tp/T = 0.5, tp 10 ms ICM 100 mA Power dissipation Tamb 47 °C PV 150 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature t 5 s, 2 mm from body Tsd 260 °C Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm2 RthJA 350 K/W Rev. 1.6, 03-May-13
1Document Number: 81505 For technical questions, contact:
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