Datasheet MBD701, MMBD701L, SMMBD701L (ON Semiconductor) - 3
| Производитель | ON Semiconductor |
| Описание | Silicon Hot-Carrier Diodes Schottky Barrier Diodes |
| Страниц / Страница | 6 / 3 — MBD701, MMBD701L, SMMBD701L. TYPICAL ELECTRICAL CHARACTERISTICS. Figure … |
| Версия | 7 |
| Формат / Размер файла | PDF / 188 Кб |
| Язык документа | английский |
MBD701, MMBD701L, SMMBD701L. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. Total Capacitance
32 предложений от 13 поставщиков Диоды Шоттки, ON Semi SMMBD701LT1G, SMT Schottky Diode, 70V 10mA, 3Pin SOT-23 |
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ON Semiconductor | от 3.31 ₽ | |
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ON Semiconductor | от 21 ₽ | |
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ON Semiconductor | по запросу | |
| SMMBD701LT1G
ON Semiconductor | по запросу | |
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MBD701, MMBD701L, SMMBD701L TYPICAL ELECTRICAL CHARACTERISTICS
2.0 500 f = 1.0 MHz 1.6 (pF) 400 KRAKAUER METHOD ANCE 1.2 300 ACIT CAP 0.8 AL 200 , TOT TC 0.4 100 , MINORITY CARRIER LIFETIME (ps) t 0 0 0 5.0 10 15 20 25 30 35 40 45 50 0 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (VOLTS) IF, FORWARD CURRENT (mA)
Figure 1. Total Capacitance Figure 2. Minority Carrier Lifetime
10 100 T A) A = 100°C m 1.0 10 T T A = 85°C A = -40°C TA = 75°C 0.1 ARD CURRENT (mA) 1.0 T , REVERSE LEAKAGE ( 0.01 , FORW A = 25°C T I R A = 25°C I F 0.001 0.1 0 10 20 30 40 50 0 0.2 0.4 0.8 1.2 1.6 2.0 VR, REVERSE VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS)
Figure 3. Reverse Leakage Figure 4. Forward Voltage
IF(PEAK) CAPACITIVE CONDUCTION IR(PEAK) FORWARD STORAGE CONDUCTION CONDUCTION BALLAST SAMPLING SINUSOIDAL NETWORK PADS OSCILLOSCOPE GENERATOR (PADS) (50 W INPUT) DUT
Figure 5. Krakauer Method of Measuring Lifetime www.onsemi.com 3
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