Datasheet MPS3646 (ON Semiconductor) - 4
| Производитель | ON Semiconductor |
| Описание | Switching Transistor NPN Silicon |
| Страниц / Страница | 8 / 4 — MPS3646. CURRENT GAIN CHARACTERISTICS. Figure 3. Minimum Current Gain. … |
| Версия | 3 |
| Формат / Размер файла | PDF / 183 Кб |
| Язык документа | английский |
MPS3646. CURRENT GAIN CHARACTERISTICS. Figure 3. Minimum Current Gain. “ON” CONDITION CHARACTERISTICS
12 предложений от 9 поставщиков Двухполюсный плоскостной транзистор, TO-92 NPN 15V 0.3A |
| MPS3646G
ON Semiconductor | 21 ₽ | |
| MPS3646G
ON Semiconductor | по запросу | |
| MPS3646G
ON Semiconductor | по запросу | |
| MPS3646G
ON Semiconductor | по запросу | |
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MPS3646 CURRENT GAIN CHARACTERISTICS
100 MPS3646 70 VCE = 1 V TJ = 125°C 50 GAIN 25°C 30 −15°C − 55°C FE 20 h , DC CURRENT 101.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA)
Figure 3. Minimum Current Gain “ON” CONDITION CHARACTERISTICS
1.0 MPS3646 TJ = 25°C 0.8 IC = 10 mA 50 mA 100 mA 200 mA OR−EMITTER TS) 0.6 TAGE (VOL 0.4 VOL 0.2 CEV , MAXIMUM COLLECT 00.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
Figure 4. Collector Saturation Region
1.2 1.0 I C) C/IB = 10 ° TS) 1.0 TJ = 25°C MAX VBE(sat) 0.5 (25°C to 125°C) qVC for VCE(sat) 0.8 MIN VBE(sat) 0 (−55 °C to 25°C) TAGE (VOL 0.6 −0.5 TION VOL (25°C to 125°C) 0.4 MAX VCE(sat) TURE COEFFICIENTS (mV/ −1.0 TURA qVB for VBE , SA (−55 °C to 25°C) 0.2 −1.5 V sat , TEMPERA Vθ 0 −2.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 0 40 80 120 160 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 5. Saturation Voltage Limits Figure 6. Temperature Coefficients http://onsemi.com 3
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