Datasheet SUD19N20-90 (Vishay) - 2

SUD19N20-90
Vishay Siliconix
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 200 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2 4 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 200 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V, TJ = 125 °C 50 µA VDS = 200 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currentb ID(on) VDS =5 V, VGS = 10 V 40 A VGS = 10 V, ID = 5 A 0.075 0.090 VGS = 10 V, ID = 5 A, TJ = 125 °C 0.190 Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 5 A, TJ = 175 °C 0.260 VGS = 6 V, ID = 5 A 0.082 0.105 Forward Transconductanceb gfs VDS = 15 V, ID = 19 A 35 S
Dynamica
Input Capacitance Ciss 1800 Output Capacitance C V oss GS = 0 V, VDS = 25 V, F = 1 MHz 180 pF Reverse Transfer Capacitance Crss 80 Total Gate Chargec Qg 34 51 Gate-Source Chargec Q V gs DS = 100 V, VGS = 10 V, ID = 19 A 8 nC Gate-Drain Chargec Qgd 12 Gate Resistance Rg 0.5 2.9 Turn-On Delay Timec td(on) 15 25 Rise Timec tr VDD = 100 V, RL = 5.2 50 75 ns I Turn-Off Delay Timec td(off) D  19 A, VGEN = 10 V, Rg = 2.5 30 45 Fall Timec tf 60 90
Source-Drain Diode Ratings and Characteristics
(TC = 25 °C) Pulsed Current ISM 50 A Diode Forward Voltageb VSD IF = 19 A, VGS = 0 V 0.9 1.5 V Source-Drain Reverse Recovery Time trr IF = 19 A, dI/dt = 100 A/µs 180 250 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71767 2 S10-2245-Rev. E, 04-Oct-10